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GBJ8005 THRU GBJ810
Reverse Voltage - 50 to 1000 Volts
GLASS PASSIVATED BRIDGE RECTIFIER
Forward Current - 8.0 Ampere
FEATURES
Glass passivated chip junction Reliable low cost construction utilizing molded plastic technique Ideal for printed circuit board Low reverse leakage current Low forward voltage drop High surge current capabiliy

GBJ
MECHANICAL DATA

Case:Molded plastic, GBJ Terminals: Terminals: Leads solderable per MIL-STD-202 method 208 guaranteed Epoxy: UL 94V-0 rate flame retardant Mounting Position: Any
Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current with Heatsink at TC = 100 OC Peak Forward Surge Current, 8.3 ms Single Half-Sine -Wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at 4.0 A DC and 25 OC Maximum Reverse Current at TA = 25 C at Rated DC Blocking Voltage TA = 125 OC
O
Symbols VRRM VRMS VDC I(AV) IFSM VF IR CJ RJC TJ,TS
GBJ 8005 50 35 50
GBJ 801 100 70 100
GBJ 802 200 140 200
GBJ 804 400 280 400 10 170 1.1 5.0 500 55 1.6
GBJ 806 600 420 600
GBJ 808 800 560 800
GBJ 810 1000 700 1000
Units V V V A A V A pF
O
Typical Junction Capacitance Typical Thermal Resistance
1) 2)
2)
1)
C/W
O
Operating and Storage Temperature Range
-55 to +150
C
Measured at 1 MHz and applied reverse voltage of 4 VDC. Thermal resistance from junction to case with device mounted on 300 mm X 300 mm X 1.6 mm Cu plate heatsink.
GBJ8005 THRU GBJ810
RATINGS AND CHARACTERISTIC CURVES
IF, INSTANTANEOUS FORWARD CURRENT (A)
10
10
IO, AVERAGE RECTIFIED CURRENT (A)
8
With heatsink
1.0
6
4
Without heatsink
0.1
2
Resistive or Inductive load
Tj = 25 C Pulse width = 300s
0
25
50
75
100
125
150
0.01
0
0.4
0.8
1.2
1.6
1.8
TC, CASE TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element)
180
IFSM, PEAK FWD SURGE CURRENT (A)
Tj = 150 C
120
Cj, JUNCTION CAPACITANCE (pF)
160
Single half-sine-wave (JEDEC method)
100
Tj = 25 C f = 1MHz
10
80
40
0
1
1 10 100
1
10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance
100
NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (A)
1000
100
Tj = 125 C
Tj = 100 C
10
1.0
Tj = 50 C
Tj = 25 C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics

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